Advanced Lithography: Nanoimprint Lithography for Semiconductor and Interconnect Technologies
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چکیده
منابع مشابه
Three-Dimensional Patterning using Ultraviolet Nanoimprint Lithography
Although an extensive number of publications have been reported on nanoimprint lithography (NIL) techniques, the ability of NIL for three-dimensional (3-D) patterning has not been fully addressed in terms of the mold fabrication and imprint processes. Developing technologies for patterning 3-D and multilevel features are important because they eliminate multiple steps and complex interlevel ali...
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We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 232 cm lithography field with good unifor...
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UNLABELLED Since its introduction in 1995, nanoimprint lithography has been demonstrated in many researches as a simple, low-cost, and high-throughput process for replicating micro- and nanoscale patterns. Due to its advantages, the nanoimprint lithography method has been rapidly developed over the years as a promising alternative to conventional nanolithography processes to fulfill the demands...
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Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL p...
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Nanoimprint lithography ~NIL! is a paradigm-shift method that has shown sub-10-nm resolution, high throughput, and low cost. To make NIL a next-generation lithography tool to replace conventional lithography, one must demonstrate the needed overlay accuracy in multilayer NIL, large-area uniformity, and low defect density. Here, we present the fabrication of 60-nm channel metal–oxide–semiconduct...
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